Aln Tej Heramic chucks muab ultra-ruaj wafer tuav hauv semiconductor raug los ntawm cov keychisms:
Thermal Stability-nrog CTE ntawm 4.5 PPM \/ K (sib piv silicon wafers), aln minimizes thermal cua sov \/ cua txias Cycles (txog 300 degree \/ min).
Electrostatic Clamping–High dielectric strength (>15 KV \/ hli) Ua kom cov khoom siv hluav taws xob hauv hluav taws xob hauv hluav taws xob sib tw nrog ± 1% tuab tuab ntau yam.
Deg tiaj tiaj-polished rau<0.1μm Ra roughness via diamond grinding, preventing particle generation while maintaining vacuum-compatible surface contact.
Thermal Uniformity–Thermal conductivity of {{0}} W\/mK ensures Less than or equal to ±0.5 degree temperature gradient across 300mm wafers during etching or CVD processes.
Ntshav tsis kam-tiv taus halogen plasmas (cf₄ \/ o₂) 10x ntev dua alumina, tswj cov khoom nto tshaj 50, {{wafer mus ncig.
Cov khoom siv tsis muaj zog - tshem tawm kev cuam tshuam nrog cov txheej txheem imagantation (tseem ceeb rau<7nm node patterning).
Lub tshuab nqus tsev tsim qauv micro Laser-drilled {2}}} μm qhov muab cov khoom siv tsis sib xws yam tsis muaj kev sib kis.
Tso cai rau Semi E78 cov qauv, aln chucks ua tiav<0.25μm wafer shift during high-speed robotic transfers, enabling sub-3nm overlay accuracy in EUV lithography tools. Their combination of thermal/electrical performance and durability makes them indispensable for advanced node fabrication.
Yog tias koj xav paub txog cov tsiaj muag nyob ze kuv, thov mus saib hauv qab nowww.ceramicstimes.com
